BGD702N 데이터 시트보기 (PDF) - Philips Electronics
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BGD702N Datasheet PDF : 8 Pages
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Philips Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702N
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
Gp
power gain
SL
slope cable equivalent
FL
flatness of frequency response
S11
input return losses
S22
output return losses
S21
CTB
Xmod
CSO
d2
Vo
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
Itot
total current consumption (DC)
CONDITIONS
MIN.
f = 50 MHz
18
f = 750 MHz
18.5
f = 40 to 750 MHz
0.2
f = 40 to 750 MHz
−
f = 40 to 80 MHz
20
f = 80 to 160 MHz
19
f = 160 to 320 MHz
18
f = 320 to 640 MHz
17
f = 640 to 750 MHz
16
f = 40 to 80 MHz
20
f = 80 to 160 MHz
19
f = 160 to 320 MHz
18
f = 320 to 640 MHz
17
f = 640 to 750 MHz
16
f = 50 MHz
−45
110 channels flat; Vo = 44 dBmV; −
measured at 745.25 MHz
110 channels flat; Vo = 44 dBmV; −
measured at 55.25 MHz
110 channels flat; Vo = 44 dBmV; −
measured at 746.5 MHz
note 1
−
dim = −60 dB; note 2
61
f = 50 MHz
−
f = 450 MHz
−
f = 550 MHz
−
f = 600 MHz
−
f = 750 MHz
−
note 3
−
MAX.
19
−
2
±0.25
−
−
−
−
−
−
−
−
−
−
+45
−58
−62
−58
−68
−
5.5
6.5
6.5
7
8.5
435
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo −6 dB;
fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
2001 Nov 02
3
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