T431616A-7C 데이터 시트보기 (PDF) - Taiwan Memory Technology
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T431616A-7C Datasheet PDF : 31 Pages
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tm TE
CH
T431616A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
VIN,VOUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
VDD,VDDQ
-1.0 to 4.6
V
Short circuit Output Current
Power Dissipation
Iout
50
mA
PD
1
W
Operating Temperature
TOPR
-5 to +70 / -40 to +85
°C
Storage Temperature
Tstg
-55 to +125
°C
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = -5 to +70 °C / -40 to +85 °C , Voltage referenced to VSS=0V)
Parameter
Symbol
Min.
Typ
Max.
Supply Voltage
VDD,VDDQ
3.0
3.3
3.6
Input High Voltage
VIH
2.0
3.0
VDD+0.3V
Input Low Voltage
VIL
-0.3
0
0.8
Output logic high voltage
VOH
2.4
-
-
Output logic low voltage
VOL
-
-
0.4
Input leakage current
IIL
-5
-
5
Output leakage current
IOL
-5
-
5
Note : 1. VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. VIL (min) = -1.0V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable, 0V ≤ VOUT ≤ VDD .
Unit
Notes
V
V
1
V
2
V IOH=-2mA
V
IOL=2mA
uA
3
uA
4
CAPACITANCE
(TA =25 °C,VDD=3.3V, f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.5
4.0
pF
ADDRESS
CADD
2.5
5.0
pF
DQ0 ~ DQ15
COUT
4.0
6.5
pF
RAS,CAS,WE,CS,CKE,LDQM,
CIN
2.5
5.0
pF
UDQM
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date: DEC. 2000
Revision: C
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