CXD2301Q 데이터 시트보기 (PDF) - Sony Semiconductor
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CXD2301Q Datasheet PDF : 23 Pages
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CXD2301Q
Electrical Characteristics
(1) When using a single power supply (Fc = 30MSPS, AVDD = DVDD = +5V, VRB = 0V, VRT = 1.5V, Ta = 25°C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Supply current
IAD +
IDD
Fc = 35MSPS
NTSC ramp wave input
27
35 mA
Standby supply current
ISTB
CE = DVDD
130 200 µA
Max. conversion rate
Min. conversion rate
Fc max VIN = 0 to 1.5V
Fc min fIN = 1kHz ramp
ADIN input band (at –1dB)
BW
ADIN input capacitance
CADIN VIN = 0.75V + 0.07Vrms
Reference resistance (VRT to VRB) RREF
Self bias
VRT
VRB = AVSS
EOT
Offset voltage
EOB
VIH
Digital input voltage
VIL
Digital input current
IIH
VIH = VDD
DVDD = max.
IIL
VIL = 0V
Digital output current
IOH
VOH = VDD–0.5V
DVDD = min.
IOL
VOL = 0.4V
Output data delay
TDL
With TTL 1gate and 10pF load
Integral nonlinearity error
EL
Fc = 30MSPS
VIN = 0 to 1.5V
Differential nonlinearity error ED
Fc = 30MSPS
VIN = 0 to 1.5V
Differential gain error
Differential phase error
DG
NTSC 40IRE mod
DP
ramp, Fc = 14.3MSPS
Aperture jitter
taj
Sampling delay
tsd
Clamp offset voltage
Eoc
VADIN = DC, VREF = 0.5V
PWS = 3µsec VREF = 1.5V
Clamp pulse delay
tcpd
Amplifier gain
DC to 15MHz
VIN1 and VIN2 bias voltage
VBI1, 2 When open
VIN1 and VIN2 input resistance RI1, 2
VIN1 and VIN2 input capacitance CI1, 2
30
230
1.38
–40
+25
3.5
–1.1
3.7
7
0
–40
8.5
19
20
8
330
1.52
–20
+45
–2.5
6.5
13
+0.5
±0.3
1
0.5
30
2
+20
–20
25
9.5
1.9
27
15
MSPS
0.5
MHz
pF
440 Ω
1.66 V
0
mV
+65
V
0.5
5
µA
5
mA
25 ns
+1.3 LSB
±0.5 LSB
%
deg
ps
ns
+40
mV
0
ns
10.5 dB
V
35 kΩ
pF
–7–
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