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CXD1179 데이터 시트보기 (PDF) - Sony Semiconductor

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CXD1179 Datasheet PDF : 14 Pages
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CXD1179Q
Electrical Characteristics
Analog characteristics
(Fc = 35MSPS, VDD = 5 V, VRB = 0.5 V, VRT = 2.5 V, Ta = 25 °C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Conversion speed
Fc
Analog input band width
(–1 dB)
BW
Offset voltage1
EOT
EOB
Integral non-linearity error EL
Differential non-linearity error ED
Differential gain error
DG
Differential phase error
DP
Aperture jitter
taj
Sampling delay
tsd
Clamp offset voltage2
Eoc
Clamp pulse delay
tcpd
VDD = 4.75 to 5.25 V
Ta = –40 to +85 °C
VIN = 0.5 to 2.5 V
fIN = 1 kHz ramp
Envelope
Potential difference to VRT
Potential difference to VRB
End point
NTSC 40 IRE mod ramp
Fc = 14.3MSPS
VIN = DC,
PWS = 3 µs
VREF = 0.5 V
VREF = 2.5 V
0.5
35 MSPS
25
MHz
–60 –40 –20
mV
+55 +75 +95
+0.5
+1.3
–1.0
LSB
±0.3 ±0.5
1
%
0.5
deg
30
ps
2
ns
–20 0 +20
mV
–30 –10 +10
25
ns
1 The offset voltage EOB is a potential difference between VRB and a point of position where the voltage
drops equivalent to 1/2 LSB of the voltage when the output data changes from “00000000” to “00000001”.
EOT is a potential difference between VRT and a potential of point where the voltage rises equivalent to
1/2LSB of the voltage when the output data changes from “11111111” to “11111110”.
2 Clamp offset voltage varies individually. When using with R, G, B 3 channels, color sliding may be
generated.
—7—

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