PBHV8115Z 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBHV8115Z Datasheet PDF : 12 Pages
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NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
[2] -
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
400
V
150
V
6
V
1
A
2
A
400
mA
0.7
W
1.4
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
1600
Ptot
(1)
(mW)
1200
006aab155
800
(2)
400
0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
Tamb (°C)
PBHV8115Z_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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