PBHV8540Z 데이터 시트보기 (PDF) - NXP Semiconductors.

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PBHV8540Z

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors. 

PBHV8540Z

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Rev. 02 — 14 January 2009

Product data sheet

1. Product profile

1.1 General description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a

SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9040Z.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I AEC-Q101 qualified

1.3 Applications

I Electronic ballast for fluorescent lighting

I LED driver for LED chain module

I LCD backlighting

I High Intensity Discharge (HID) front lighting

I Automotive motor management

I Hook switch for wired telecom

I Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

VCESM

VCEO

IC

hFE

Quick reference data

Parameter

collector-emitter peak

voltage

collector-emitter voltage

collector current

DC current gain

Conditions

VBE = 0 V

open base

VCE = 10 V;

IC = 50 mA

Min Typ Max Unit

-

-

500 V

-

-

400 V

-

-

0.5 A

100 200 -

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