PBSS2515M 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBSS2515M Datasheet PDF : 9 Pages
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NXP Semiconductors
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
Product data sheet
PBSS2515M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
notes 1 and 2
Tamb ≤ 25 °C; notes 1 and 2
Tamb ≤ 25 °C; note 1 and 3
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
15
15
6
500
1
100
250
430
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
mW
°C
°C
°C
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
in free air; notes 1 and 2
in free air; notes 1, 3 and 4
VALUE
500
290
UNIT
K/W
K/W
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Sep 15
3
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