PBSS2515M,315 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBSS2515M,315 Datasheet PDF : 9 Pages
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NXP Semiconductors
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
Product data sheet
PBSS2515M
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation voltage
RCEsat
VBEsat
VBEon
fT
Cc
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CONDITIONS
VCB = 15 V; IE = 0
VCB = 15 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
IC = 10 mA; IB = 0.5 mA
IC = 200 mA; IB = 10 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
VCE = 2 V; IC = 100 mA; note 1
IC = 100 mA; VCE = 5 V;
f = 100 MHz
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MIN.
−
−
−
200
150
90
−
−
−
−
−
−
250
−
TYP.
−
−
−
−
−
−
−
−
−
360
−
−
420
4.4
MAX. UNIT
100 nA
50
μA
100 nA
−
−
−
25
150
250
<500
1.1
0.9
−
mV
mV
mV
mΩ
V
V
MHz
6
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Sep 15
4
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