PBYR2545CTF 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
PBYR2545CTF Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
15 Forward dissipation, PF (W)
Vo = 0.37 V
Rs = 0.014 Ohms
PBYR2545CTX
0.5
Ths(max) (C)
78
D = 1.0
0.2
10
102
0.1
5
I
tp
D=
tp
T
126
T
t
0
150
0
5
10
15
20
25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
15 Forward dissipation, PF (W) PBYR2545CTX
Ths(max) (C)
78
Vo = 0.37 V
Rs = 0.014 Ohms
a = 1.57
2.2 1.9
10
2.8
102
4
5
126
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50 Forward current, IF (A)
Tj = 25 C
Tj = 125 C
40
PBYR2545CTX
30
typ
20
max
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100 Reverse current, IR (mA)
PBYR3045WT
125 C
10
100 C
75 C
1
50 C
0.1
Tj = 25 C
0.01
0
25
50
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
10000
PBYR2545CT
1000
100
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
PD
tp
D=
tp
T
0.01
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR2545CTX
Fig.6. Transient thermal impedance per diode;
Zth j-hs = f(tp).
October 1998
3
Rev 1.300
Share Link: 