JS48F4400P0Y00 데이터 시트보기 (PDF) - Numonyx -> Micron

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JS48F4400P0Y00

Numonyx™ Wireless Flash Memory (W18)

Numonyx -> Micron 

Numonyx™ Wireless Flash Memory (W18)

Product Features

Datasheet

„ High Performance Read-While-Write/Erase

„ Architecture

— Burst frequency at 66 MHz

— Multiple 4-Mbit partitions

(zero wait states)

— Dual Operation: RWW or RWE

— 60 ns Initial access read speed

— Parameter block size = 4-Kword

— 11 ns Burst mode read speed

— Main block size = 32-Kword

— 20 ns Page mode read speed

— Top or bottom parameter devices

— 4-, 8-, 16-, and Continuous-Word Burst

mode reads

— Burst and Page mode reads in all Blocks,

across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/

— 16-bit wide data bus

„ Software

— 5 µs (typ.) Program and Erase Suspend

latency time

— Flash Data Integrator (FDI) and Common

Flash Interface (CFI) Compatible

word

— Programmable WAIT signal polarity

„ Security

„ Packaging and Power

— 128-Bit OTP Protection Register:

64 unique pre-programmed bits +

— 90 nm: 32- and 64-Mbit in VF BGA

64 user-programmable bits

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— Absolute Write Protection with VPP at ground

— Individual and Instantaneous Block Locking/

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

Unlocking with Lock-Down Capability

— VCC = 1.70 V to 1.95 V

„ Quality and Reliability

— VCCQ (90 nm) = 1.7 V to 1.95 V

— Temperature Range: –40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— VCCQ (130 nm) = 1.7 V to 2.24 V or 1.35 V

to 1.80 V

— VCCQ (130 nm) = 1.35 V to 2.24 V

— 130 nm ETOX™ VIII Process

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)

Order Number: 290701-18

November 2007

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