PEMD19 데이터 시트보기 (PDF) - Philips Electronics
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PEMD19 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD19; PUMD19
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
100
-
-
-
15.4
22
100
nA
1
µA
50
µA
100
nA
-
150
mV
28.6
kΩ
-
-
2.5
pF
-
-
3
pF
9397 750 14408
Product data sheet
Rev. 01 — 17 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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