PEMD19 데이터 시트보기 (PDF) - Philips Electronics
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PEMD19 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMD19; PUMD19
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
500
hFE
(1)
400
(2)
300
200
(3)
006aaa172
103
VCEsat
(mV)
102
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(2) (1)
(3)
100
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
103
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(1)
hFE
(2)
(3)
102
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
−1
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VCEsat
(V)
−10−1
(1) (2) (3)
10
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 3. TR2 (PNP): DC current gain as a function of
collector current; typical values
−10−2
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
9397 750 14408
Product data sheet
Rev. 01 — 17 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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