PESDXS2UT 데이터 시트보기 (PDF) - NXP Semiconductors.

부품명

상세내역

제조사

PESDXS2UT

Double ESD protection diodes in SOT23 package

NXP Semiconductors. 

NXP Semiconductors

Double ESD protection diodes in SOT23

package

Product data sheet

PESDxS2UT series

FEATURES

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs

• Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A

• Ultra-low reverse leakage current: IRM < 700 nA

• ESD protection > 23 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VALUE

UNIT

VRWM

reverse stand-off 3.3, 5.2, 12, 15 V

voltage

and 24

Cd

diode capacitance 207, 152, 38, 32 pF

VR = 0 V;

and 23

f = 1 MHz

number of

2

protected lines

PINNING

PIN

1

2

3

DESCRIPTION

cathode 1

cathode 2

common anode

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23

plastic package. Designed to protect up to two

transmission or data lines from ElectroStatic Discharge

(ESD) damage.

MARKING

TYPE NUMBER

PESD3V3S2UT

PESD5V2S2UT

PESD12VS2UT

PESD15VS2UT

PESD24VS2UT

MARKING CODE(1)

*U9

*U1

*U2

*U3

*U4

Note

1. * = p : made in Hong Kong.

* = t : made in Malaysia.

* = W : made in China.

1

3

1

3

2

2

001aaa490

sym022

Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15

2

Share Link: