PESD5V0S2BT 데이터 시트보기 (PDF) - Philips Electronics

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PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode in SOT23 package

Philips Electronics 

Philips Semiconductors

PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode

2. Pinning information

Table 2:

Pin

1

2

3

Discrete Pinning

Description

cathode 1

cathode 2

double cathode

Simplified outline

3

1

2

SOT23

Symbol

1

3

2

sym031

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description

PESD5V0S2BT -

plastic surface mounted package; 3 leads

Version

SOT23

4. Marking

Table 4: Marking

Type number

PESD5V0S2BT

[1] * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

5. Limiting values

Marking code [1]

*G5

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per diode

Ppp

peak pulse power

Ipp

peak pulse current

Tj

Tamb

junction temperature

operating ambient

temperature

Tstg

storage temperature

8/20 µs pulse

8/20 µs pulse

[1] [2] -

[1] [2] -

-

−65

−65

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.

[2] Measured between pins 1 to 3 or pin 2 to 3.

Max

130

12

150

+150

+150

Unit

W

A

°C

°C

°C

9397 750 13344

Product data sheet

Rev. 02 — 27 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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