PESD5V0S2BT 데이터 시트보기 (PDF) - Philips Electronics
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PESD5V0S2BT
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PESD5V0S2BT Datasheet PDF : 11 Pages
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Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
6. Characteristics
Table 8: Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Per diode
VRWM reverse stand-off
voltage
IRM
reverse leakage
current
V(CL)R clamping voltage
VBR
breakdown voltage
rdiff
differential
resistance
VRWM = 5 V
Ipp = 1 A
Ipp = 12 A
IR = 1 mA
IR = 1 mA
-
-
-
5
[1] [2] -
-
[1] [2] -
-
5.5 -
-
-
Cd
diode capacitance f = 1 MHz; VR = 0 V
-
35
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform, see Figure 3.
[2] Measured from pin 1 to 3 or pin 2 to 3.
Max Unit
5V
100 nA
10 V
14 V
9.5 V
50 Ω
45 pF
103
Ppp
(W)
102
001aaa632
1.2
Ppp
Ppp(25 °C)
0.8
0.4
001aaa633
10
1
10
102
103
104
tp (µs)
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see
Figure 1.
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values.
0
0
50
Tamb = 25 °C.
100
150
200
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
9397 750 13344
Product data sheet
Rev. 02 — 27 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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