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PHX10N40E 데이터 시트보기 (PDF) - Philips Electronics
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PHX10N40E
PowerMOS transistors Avalanche energy rated
Philips Electronics
PHX10N40E Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX10N40E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I
S
Continuous source current T
hs
= 25˚C
(body diode)
I
SM
Pulsed source current (body T
hs
= 25˚C
diode)
V
SD
Diode forward voltage
I
S
= 10.6 A; V
GS
= 0 V
t
rr
Reverse recovery time
I
S
= 10.6 A; V
GS
= 0 V; dI/dt = 100 A/
µ
s
Q
rr
Reverse recovery charge
MIN. TYP. MAX. UNIT
-
- 10.6 A
-
- 42 A
-
- 1.2 V
- 330 - ns
- 4.8 -
µ
C
December 1998
3
Rev 1.200
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