PHX10N40E 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
PHX10N40E Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ths)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
100 ID, Drain current (Amps)
10
RDS(ON) = VDS/ID
1
DC
0.1
PHX5N40
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Product specification
PHX10N40E
10 Zth j-hs, Transient thermal impedance (K/W) PHX4N60
D = 0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
PD
tp
D
=
tp
T
single pulse
T
t
0.0011us
10us 100us 1ms
10ms 100ms
1s
tp, pulse width (s)
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
ID, Drain current (Amps)
40
Tj = 25 C
PHP10N40
10 V
30
7V
6.5 V
20
6V
5.5 V
10
5V
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
1 RDS(on), Drain-Source on resistance (Ohms) PHP10N40
4.5 V 5 V 5.5 V 6 V 6.5 V
VGS = 7 V
Tj = 25 C
0.8
10 V
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
December 1998
4
Rev 1.200
Share Link: 