PHX10N40E 데이터 시트보기 (PDF) - Philips Electronics
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PHX10N40E Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
40 ID, Drain current (Amps)
VDS > ID x RDS(on)max
30
20
PHP10N40
Tj = 25 C
Tj = 150 C
10
0
0
2
4
6
8
10
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
gfs, Transconductance (S)
10
VDS > ID x RDS(on)max
8
Tj = 25 C
6
PHP10N40
150 C
4
2
0
0
10
20
30
40
ID, Drain current (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.3 A; VGS = 10 V
Product specification
PHX10N40E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
10000 Junction capacitances (pF)
PHP10N40
Ciss
1000
Coss
100
Crss
10
1
10
100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
5
Rev 1.200
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