PHX2N60E 데이터 시트보기 (PDF) - Philips Electronics

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PHX2N60E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

Product specification

PHX2N60E

Non-repetitive Avalanche current, IAS (A)

10

Tj prior to avalanche = 25 C

1

VDS

125 C

ID

0.1

1E-06

tp

PHP2N60E

1E-05

1E-04

1E-03

Avalanche time, tp (s)

1E-02

Fig.17. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tp);

unclamped inductive load

Maximum Repetitive Avalanche Current, IAR (A)

10

1

Tj prior to avalanche = 25 C

125 C

0.1

0.01

1E-06

PHP2N60E

1E-05

1E-04

1E-03

Avalanche time, tp (s)

1E-02

Fig.18. Maximum permissible repetitive avalanche

current (IAR) versus avalanche time (tp)

December 1998

6

Rev 1.200

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