PHX4N60E 데이터 시트보기 (PDF) - Philips Electronics
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PHX4N60E Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX4N60E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
-
- 3.6 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
∆V(BR)DSS / Drain-source breakdown
∆Tj
voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 2.25 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 2.25 A
Drain-source leakage current VDS = 600 V; VGS = 0 V
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 4.5 A; VDD = 480 V; VGS = 10 V
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
tf
Turn-off fall time
VDD = 300 V; RD = 68 Ω;
RG = 12 Ω
Ld
Internal drain inductance Measured from drain lead to centre of die
Ls
Internal source inductance Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
600 -
-
V
- 0.1 - %/K
- 2.1 2.5 Ω
2.0 3.0 4.0 V
2 3.4 -
S
-
2 100 µA
- 50 500 µA
- 10 200 nA
- 48 60 nC
-
4
6 nC
- 24 30 nC
- 12 - ns
- 33 - ns
- 82 - ns
- 36 - ns
- 4.5 - nH
- 7.5 - nH
- 600 - pF
- 80 - pF
- 46 - pF
December 1998
2
Rev 1.200
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