PJSDA5V2W5 데이터 시트보기 (PDF) - PANJIT INTERNATIONAL

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PJSDA5V2W5

QUAD TVS/ESD ARRAYS FOR ESD AND LATCH-UP PROTECTION

PANJIT INTERNATIONAL 

PJSDA5V2W5 SERIES

ELECTRICAL CHARACTERISTICS (TJ=25oC)

PA RA ME TE R

PJSDA5V2W5

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20µs)

Off State Junction Capacitance

PJSDA5V8W5

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20µs)

Off State Junction Capacitance

PJSDA6V1W5

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20µs)

Off State Junction Capacitance

S YMB OL

C OND ITION

M IN .

TYP.

MAX.

UNIT

V WRM

-

VBR

IBR=1 mA

5.3

IR

V R=3 .3 V

-

VC

I PP=10A

-

CJ

0V dc,f=1MHZ between I/O

lines and GND

-

-

3.3

V

5.6

5.88

V

-

1

µA

-

10

V

240

-

pF

V WRM

-

VBR

IBR=1 mA

5.9

IR

V R=4 .3 V

-

VC

I PP=10A

-

CJ

0V dc,f=1MHZ between I/O

lines and GND

-

-

4.3

V

6.2

6.51

V

-

1

µA

-

11

V

220

-

pF

V WRM

-

VBR

IBR=1 mA

6.2

IR

V R=5 .0 V

-

VC

I PP=10A

-

CJ

0V dc,f=1MHZ between I/O

lines and GND

-

-

5

V

6.8

7.04

V

-

5

µA

-

12

V

180

-

pF

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

I/O

GND

I/O

I/O

GND

GND

Bi-directional Protecton

STAD-OCT.17.2007

GND

Uni-directional Protection

PAGE . 2

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