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PMBT3906YS,125 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBT3906YS,125
40 V, 200 mA PNP/PNP general-purpose double transistor
NXP Semiconductors.
PMBT3906YS,125 Datasheet PDF : 12 Pages
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NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
7. Characteristics
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
I
CBO
collector-base cut-off
V
CB
=
−
30 V; I
E
= 0 A
current
I
EBO
emitter-base cut-off
V
EB
=
−
6 V; I
C
= 0 A
current
h
FE
V
CEsat
V
BEsat
f
T
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
transition frequency
V
CE
=
−
1 V
I
C
=
−
0.1 mA
I
C
=
−
1 mA
I
C
=
−
10 mA
I
C
=
−
50 mA
I
C
=
−
100 mA
I
C
=
−
10 mA;
I
B
=
−
1 mA
I
C
=
−
50 mA;
I
B
=
−
5 mA
I
C
=
−
10 mA;
I
B
=
−
1 mA
I
C
=
−
50 mA;
I
B
=
−
5 mA
V
CE
=
−
20 V;
I
C
=
−
10 mA;
f = 100 MHz
C
c
collector capacitance
V
CB
=
−
5 V;
I
E
= i
e
= 0 A;
f = 1 MHz
C
e
emitter capacitance
V
BE
=
−
0.5 V;
I
C
= i
c
= 0 A;
f = 1 MHz
NF
noise figure
V
CE
=
−
5 V;
I
C
=
−
100
µ
A;
R
S
= 1 k
Ω
;
f = 10 Hz to 15.7 kHz
t
d
delay time
t
r
rise time
t
on
turn-on time
t
s
storage time
t
f
fall time
t
off
turn-off time
V
CC
=
−
3 V;
I
C
=
−
10 mA;
I
Bon
=
−
1 mA;
I
Boff
= 1 mA
Min Typ Max Unit
-
-
−
50 nA
-
-
−
50 nA
60 180 -
80 180 -
100 180 300
60 130 -
30 50 -
-
−
100
−
250 mV
-
−
165
−
400 mV
-
−
750
−
850 mV
-
−
850
−
950 mV
250 -
-
MHz
-
-
4.5 pF
-
-
10 pF
-
-
4
dB
-
-
35 ns
-
-
35 ns
-
-
70 ns
-
-
225 ns
-
-
75 ns
-
-
300 ns
PMBT3906YS_2
Product data sheet
Rev. 02 — 13 May 2009
© NXP B.V. 2009. All rights reserved.
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