PMBTA13 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
PMBTA13 Datasheet PDF : 8 Pages
| |||
NXP Semiconductors
NPN Darlington transistors
Product data sheet
PMBTA13; PMBTA14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
30
10
500
800
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEon
fT
collector cut-off current
emitter cut-off current
DC current gain
PMBTA13
IE = 0; VCB = 30 V
IC = 0; VEB = 10 V
IC = 10 mA; VCE = 5 V; (see Fig.2)
PMBTA14
DC current gain
PMBTA13
IC = 100 mA; VCE = 5 V; (see Fig.2)
PMBTA14
collector-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IC = 100 mA; IB = 0.1 mA
IC = 100 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
MAX.
100
100
UNIT
nA
nA
5000 −
10000 −
10000 −
20000 −
−
1.5
−
1.4
125 −
V
V
MHz
2004 Jan 22
3
Share Link: 