PNZ3108 데이터 시트보기 (PDF) - Panasonic Corporation
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PNZ3108 Datasheet PDF : 2 Pages
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PIN Photodiodes
PNZ3108
PIN Photodiode
For optical control systems
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
VR
30
V
PD
30
mW
Topr
–25 to +85
˚C
Tstg –30 to +100 ˚C
5.0±0.1
2.54±0.1
4
3
Unit : mm
1.8±0.3
0.8±0.2
0.6±0.1
4-0.6+–00..21
4-0.5±0.15
1
2
10˚ 10˚
0.2+–00..015
5˚
5˚ 1: Anode 1
2: Common cathode
3: Anode 2
4: Common cathode
Dimensions of detection area
2.1
Unit : mm
1.5
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
ID
IL*1
λP
tr, tf*2
Ct
RS*3
a*4
VR = 1V
VR = 1V, L = 1000 lx
VR = 1V, λ = 900nm, E = 1mW/cm2
VR = 1V
VR = 1V, RL = 1kΩ
VR = 1V, f = 1MHz
VR = 1V, Va = 0.5V
VR = 1V
*1 IL = I1 + I2
Note: I1 and I2 are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2 GaAs light emitting diode light source ( λ = 800nm)
*3 Va is the potential difference between anodes A1 and A2.
*4 a = | (I1–I2)/(I1+I2) |
Note : Incident light is at the position 100 µm from the reference position.
The reference position is the position where I1 = I2.
min typ max Unit
2 nA
7
12
µA
8
µA
940
nm
5
µs
8
pF
250
kΩ
0.133
1
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