PS2532L-1-V(1990) 데이터 시트보기 (PDF) - NEC => Renesas Technology

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PS2532L-1-V
(Rev.:1990)

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

NEC => Renesas Technology 

DATA SHEET

PHOTOCOUPLER

PS2532-1,-2,-4,PS2532L-1,-2,-4

HIGH COLLECTOR TO EMITTER VOLTATGE

HIGH ISOLATION VOLTAGE

MULTI PHOTOCOUPLER SIRIES

−NEPOCTM Series−

DESCRIPTION

The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

and an NPN silicon darlington connected phototransistor.

The PS2532-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2532L-1, -2, -4 are lead bending type

(Gull-wing) for surface mount.

FEATURES

• High collector to emitter voltage (VCEO = 300 V)

• High Isolation voltage BV = 5 000 Vr.m.s.: standard products

BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)

• High current transfer ratio (CTR = 4 000 % TYP.)

• High-speed switching (tr, tf = 100 µs TYP.)

• Ordering number of taping product: PS2532L-1-E3, E4, F3, F4, PS2532L-2-E3, E4

• UL approved: File No. E72422 (S)

• BSI approved: No. 8221/8222

• NEMKO approved: No. 98101708

• SEMKO approved: No. 9824187/01-02

• DEMKO approved: No. 307863

• FIMKO approved: No. F1 11397

• VDE0884 approved (Option)

APPLICATIONS

• Telephone, Exchange equipment

• FAX/MODEM

The information in this document is subject to change without notice.

Document No. P11434EJ5V0DS00 (5th edition)

The mark • shows major revised points.

Date Published September 1998 NS CP(K)

Printed in Japan

©

1990

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