2N4031 데이터 시트보기 (PDF) - Philips Electronics

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2N4031

PNP high-voltage transistors

Philips Electronics 

Philips Semiconductors

PNP high-voltage transistors

Product specification

2N5415; 2N5416

FEATURES

PINNING

• Low current (max. 200 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Switching and linear amplification in military, industrial

and consumer equipment.

PIN

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

DESCRIPTION

handbook, halfpag1e

2

3

PNP high-voltage transistor in a TO-39 metal package.

2

3

1

MAM334

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

2N5415

2N5416

VCEO

collector-emitter voltage

2N5415

2N5416

ICM

peak collector current

Ptot

total power dissipation

hFE

DC current gain

2N5415

2N5416

fT

transition frequency

CONDITIONS

open emitter

open base

Tamb ≤ 50 °C

IC = −50 mA; VCE = −10 V

IC = −10 mA; VCE = −10 V; f = 5 MHz

MIN. MAX. UNIT

−

−200 V

−

−350 V

−

−200 V

−

−300 V

−

400

mA

−

1

W

30

150

30

120

15

−

MHz

1997 May 21

2

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