2N4031 데이터 시트보기 (PDF) - Philips Electronics
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2N4031 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
2N5415; 2N5416
CHARACTERISTICS
Tcase = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
Ce
fT
collector cut-off current
2N5415
IE = 0; VCB = −175 V
−
2N5416
IE = 0; VCB = −280 V
−
emitter cut-off current
2N5415
2N5416
DC current gain
2N5415
IC = 0; VEB = −4 V
−
IC = 0; VEB = −6 V
−
IC = −50 mA; VCE = −10 V
30
2N5416
30
collector-emitter saturation voltage IC = −50 mA; IB = −5 mA
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz −
emitter capacitance
IC = ic = 0; VEB = −6 V; f = 1 MHz
−
transition frequency
IC = −10 mA; VCE = −10 V; f = 5 MHz 15
MAX. UNIT
−50
µA
−50
µA
−20
µA
−20
µA
150
120
−500
15
75
−
mV
pF
pF
MHz
1997 May 21
4
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