Philips Semiconductors
PEMD24; PUMD24
NPN/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
103
hFE
102
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(1)
(2)
(3)
102
VCEsat
(mV)
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(1)
(2)
(3)
10
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
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10
10
10−1
1
10
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
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10
VI(on)
(V)
(1)
(2)
(3)
1
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
IC (mA)
10−1
10−2
10−1
1
10
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14457
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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