QSE157(2004) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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QSE157 Datasheet PDF : 7 Pages
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PLASTIC SILICON
OPTOLOGIC® PHOTOSENSOR
QSE156 QSE157 QSE158 QSE159
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Output Current
Supply Voltage
Output Voltage
Power Dissipation(1)
TOPR
-40 to +85
°C
TSTG
-40 to +100
°C
TSOL-I
240 for 5 sec
°C
TSOL-F
260 for 10 sec
°C
IO
50
mA
VCC
4.0 to 16
V
VO
30
V
PD
100
mW
NOTES:
1. Derate power dissipation linearly 2.50 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS (TA = –40°C to +85°C, VCC = 4.5 to 16 volts)
Parameter
Symbol
Min Typ Max Units
Test Conditions
Positive Going Threshold Irradiance(5)
Hysteresis Ratio
Supply Current
Peak to peak ripple which will cause false
triggering
Ee (+)
Ee (+)/Ee(–)
ICC
0.025
1.10
—
—
0.250
2.00
5.0
mW/cm2
mA
TA = 25°C
Ee = 0 or .3 mW/cm2(5)
2.00
V f = DC to 50 MHZ
QSE156 (BUFFER TOTEM POLE)
High Level Output Voltage
Low Level Output Voltage
QSE157 (INVERTER TOTEM POLE)
VOH
VOL
VCC-2.1
—
—
0.40
V
Ee = .3 mW/cm2, IOH = -1.0mA(5)
V
Ee = 0, IOL = 16 mA
High Level Output Voltage
Low Level Output Voltage
QSE158 (BUFFER OPEN COLLECTOR)
VOH
VOL
VCC-2.1
—
High Level Output Current
IOH
—
Low Level Output Voltage
VOL
—
QSE159 (INVERTER OPEN COLLECTOR)
—
0.40
100
0.40
V
Ee = 0, IOH = -1.0mA
V
Ee = .3 mW/cm2, IOL = 16mA(5)
µA
Ee = .3mW/cm2, VOH = 30V(5)
V
Ee = 0, IOL = 16mA
High Level Output Current
Low Level Output Voltage
QSE156, QSE157
Output rise, fall times
Propagation delay
QSE158, QSE159
Output rise, fall times
Propagation delay
IOH
VOL
tr, tf
tphl, tplh
tr, tf
tphl, tplh
—
100
µA Ee = 0, VOH = 30V
—
0.40
V
Ee = .3mW/cm2, IOL = 16mA(5)
—
70
6.0
nS Ee = 0 or .3 mW/cm2, f = 10KHz
µS DC = 50%, RL=360Ω(5)
—
100
6.0
nS Ee = 0 or .3 mW/cm2, f = 10KHz
µS DC = 50%, RL=360Ω(5)
© 2004 Fairchild Semiconductor Corporation
Page 3 of 7
8/4/04
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