R6020FNX 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 15 Pages
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R6020FNX
Data Sheet
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Transconductance
gfs *6 VDS = 10V, ID = 10A
7
13
-
S
Input capacitance
Output capacitance
r Reverse transfer capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = 25V
f = 1MHz
-
2040
-
-
1660
-
pF
-
70
-
o Effective output capacitance,
f energy related
d Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 480V
-
107
-
pF
-
108
-
e Turn - on delay time
d Rise time
n s Turn - off delay time
e n Fall time
td(on) *6 VDD ⋍ 300V, VGS = 10V
-
tr *6
ID = 10A
-
td(off) *6 RL = 30
-
tf *6
RG = 10
-
50
-
70
-
ns
170 340
40
80
m sig Gate Charge characteristics(Ta = 25C)
m e Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
o D Total gate charge
c Gate - Source charge
e w Gate - Drain charge
Qg *6
Qgs *6
Qgd *6
VDD ⋍ 300V
ID = 20A
VGS = 10V
-
65
-
-
15
-
nC
-
25
-
R e Gate plateau voltage
V(plateau) VDD ⋍ 300V, ID = 20A
-
7.8
-
V
ot N *1 Limited only by maximum temperature allowed.
N*2 Pw 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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3/13
2016.02 - Rev.D
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