MDD44-08N1B(2016) 데이터 시트보기 (PDF) - IXYS CORPORATION
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MDD44-08N1B Datasheet PDF : 6 Pages
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Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
I F(RMS)
VF0
rF
R thJC
R thCH
Ptot
I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 800 V
VR = 800 V
forward voltage drop
IF = 100 A
IF = 200 A
IF = 100 A
IF = 200 A
average forward current
TC = 100°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ
junction capacitance
VR = 400 V; f = 1 MHz
MDD44-08N1B
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
Ratings
min. typ. max. Unit
900 V
800 V
100 µA
10 mA
1.30 V
1.60 V
1.26 V
1.67 V
59 A
100 A
0.80 V
4.3 mΩ
0.59 K/W
0.20
K/W
212 W
1.15 kA
1.24 kA
980 A
1.06 kA
6.62 kA²s
6.40 kA²s
4.80 kA²s
4.63 kA²s
27
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
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