MDD44-08N1B(2016) 데이터 시트보기 (PDF) - IXYS CORPORATION
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MDD44-08N1B Datasheet PDF : 6 Pages
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MDD44-08N1B
Rectifier
600
500
400
Ptot
300
[W]
200
100
Circuit
B6
3x MDD44
RthJA
[KW]
0.15
0.2
0.35
0.3
0.4
0.5
0.6
0.7
0
0
50
100
150
0
50
100
150
200
IDAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
0.8
0.6
ZthJC
30°
60°
120°
180°
DC
0.4
[K/W]
0.2
0
10-3
10-2
10-1
100
101
102
103
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)
RthJC for various conduction angles d:
d RthJC [K/W]
DC 0.59
180° 0.61
120° 0.63
60° 0.66
30° 0.70
Constants for ZthJC calculation:
i Rthi [K/W] ti [s]
1 0.012 0.0012
2 0.045 0.0950
3 0.533 0.4550
1.0
0.8
Z 0.6
thJK
30°
60°
120°
180°
DC
[K/W] 0.4
0.2
0
10-3
10-2
10-1
100
101
102
103
t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per thyristor)
RthJK for various conduction angles d:
d RthJK [K/W]
DC 0.79
180° 0.81
120° 0.83
60° 0.86
30° 0.90
Constants for ZthJK calculation:
i Rthi [K/W] ti [s]
1 0.012 0.0012
2 0.045 0.0950
3 0.533 0.4550
4 0.200 0.4950
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
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