RB160M-40(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor
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RB160M-40 Datasheet PDF : 4 Pages
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Diodes
RB160M-40
zElectrical characteristic curves (Ta=25°C)
1000
Ta=75℃
Ta=125℃
100
Ta=150℃
10
Ta=25℃
Ta=-25℃
1
0 100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
Ta=125℃
Ta=75℃
10
Ta=25℃
1
0.1
Ta=-25℃
0.01
0.001
0
5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
480
30
Ta=25℃
VF=1A
470
n=30pcs
25
20
460
15
450
AVE:454.3mV
10
440
5
430
0
VF DISPERSION MAP
300
Ta=25℃
290
VR=40V
n=30pcs
280
270
260
250
240
AVE:4.08uA
230
220
210
200
IR DISPERSION MAP
AVE:279.7pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Ct DISPERSION MAP
200
30
Ifsm
1cyc
25
150
8.3ms
20
100
Ta=25℃
IF=0.5A
IR=1A
80
Irr=0.25*IR
n=10pcs
60
100
15
50
AVE:83.0A
0
IFSM DISRESION MAP
10
5
AVE:10.4ns
0
trr DISPERSION MAP
40
Ifsm
20
8.3ms 8.3ms
1cyc
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
200
Ifsm
150
t
100
50
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Mounted on epoxy board
IM=10mA
IF=0.5A
100
1ms time
300us
10
Rth(j-a)
Rth(j-c)
1
0.1
0.001 0.01 0.1TIME:t1(s) 10 100 1000
Rth-t CHARACTERISTICS
1
0.9
0.8
D=1/2
0.7
0.6
DC
0.5 Sin(θ＝180)
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.E
2/3
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