RB160M-40(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor

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RB160M-40
(Rev.:2008)

Schottky barrier diode

ROHM Semiconductor 

Diodes

Schottky barrier diode

RB160M-40

RB160M-40

zApplications

General rectification

zDimensions (Unit : mm)

1.6±0.1

0.1±0.1

　　　 0.05

z Land size figure (Unit : mm)

1.2

zFeatures

1) Small power mold type. (PMDS)

2) Low IR.

3) High reliability.

zConstruction

Silicon epitaxial planar

PMDU

zStructure

0.9±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

0.8±0.1

z Taping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φ1.55±0.05

0.25±0.05

1.81±0.1

4.0±0.1

φ1.0±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

Storage temperature

VRM

VR

Io

IFSM

Tj

Tstg

(*1)Mounted on epoxy board. 180°Half sine wave

Limits

40

40

1

30

150

-40 to +150

1.5MAX

Unit

V

V

A

A

℃

℃

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

Unit

Conditions

Forward voltage

VF

-

0.46

0.51

V IF=1.0A

Reverse current

IR

-

4.0

30

µA VR=40V

Rev.E

1/3

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