RB160M-40 데이터 시트보기 (PDF) - ROHM Semiconductor
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RB160M-40 Datasheet PDF : 6 Pages
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RB160M-40
Data Sheet
1000
Ta=75℃
10000
Ta=125℃
1000
f=1MHz
Ta=125℃
1000
Ta=75℃
100
100
100
Ta=150℃
Ta=25℃
10
Ta=25℃
10
Ta=-25℃
1
0 100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0.1
Ta=-25℃
0.01
0.001
0
5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
1
0
for 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
480
30
Ta=25℃
VF=1A
d 470
n=30pcs
25
20
460
e 15
450
d AVE:454.3mV
10
440
n s 5
430
0
e n VF DISPERSION MAP
300
Ta=25℃
290
VR=40V
n=30pcs
280
270
260
250
240
AVE:4.08uA
230
220
210
200
IR DISPERSION MAP
AVE:279.7pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Ct DISPERSION MAP
m ig 200
30
Ifsm
1cyc
25
s 150
8.3ms
20
m e 100
15
100
Ta=25℃
IF=0.5A
IR=1A
80
Irr=0.25*IR
n=10pcs
60
o D 50
AVE:83.0A
c 0
e w IFSM DISRESION MAP
10
5
AVE:10.4ns
0
trr DISPERSION MAP
40
Ifsm
20
8.3ms 8.3ms
1cyc
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
R eMounted on epoxy board
200
1000
1
IM=10mA
IF=0.5A
0.9
Rth(j-a)
t Ifsm
0.8
D=1/2
N 150
t
100
1ms time
0.7
300us
o100
10
Rth(j-c)
0.6
0.5 Sin(θ＝180)
DC
0.4
N 0.3
50
1
0.2
0.1
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2015.09 - Rev.F
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