RBO40(2003) 데이터 시트보기 (PDF) - STMicroelectronics

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RBO40
(Rev.:2003)

REVERSED BATTERY AND OVERVOLTAGE PROTECTION

STMicroelectronics 

RBO40-40G / RBO40-40T

Fig. 4 : Relative variation of thermal impedance

junction to case versus pulse duration.

Fig. 5-1 : Peak forward voltage drop versus peak

forward current (typical values) - (TRANSIL T2).

Zth(j-c)/Rth(j-c)

1.0

0.5

0.2

0.1

1E-3

1E-2

tp (s)

1E-1

1E+0

1E+1

VFM(V)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.1 0.2

Tj = 25°C

0.5 1 2

Tj = 150°C°

IFM(A)

5 10 20 50 100

Fig. 5-2 : Peak forward voltage drop versus peak

forward current (typical values) - (DIODE D1).

Fig. 6 : Relative variation of leakage current

versus junction temperature.

VFM(V)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.1 0.2

Tj = 25°C

0.5 1 2

Tj = 150°C°

IFM(A)

5 10 20 50 100

ORDERING INFORMATION

RBO 40 - 40 G

8/10

Reverse Battery &

Overvoltage Protection

VCL = 40V

IF(AV) = 40A

Package:

G = D2PAK

T = TO-220AB

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