RF2155 데이터 시트보기 (PDF) - RF Micro Devices

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RF2155

3V PROGRAMMABLE GAIN POWER AMPLIFIER

RF Micro Devices 

RF2155

2

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Typical Applications

• Analog Communication Systems

• 900MHz Spread Spectrum Systems

• 400MHz Industrial Radios

• Driver Stage for Higher Power Applications

• 3V Applications

2

Product Description

The RF2155 is a 3V medium power programmable gain

amplifier IC. The device is manufactured on an advanced

Gallium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in analog cellular phone transmitters or ISM

applications operating at 915MHz. The device is self-con-

tained with the exception of the output matching network

and power supply feed line. A two-bit digital control pro-

vides 4 levels of power control, in 8dB steps.

0.158

0.150

0.392

0.386

0.021

0.014

0.069

0.064

-A-

0.009

0.004

0.050

8° MAX

0° MIN

0.244

0.230

0.035

0.016

0.010

0.008

0.060

0.054

Optimum Technology Matching® Applied

Si BJT

üGaAs HBT

GaAs MESFET

Si Bi-CMOS

SiGe HBT

Si CMOS

NC 1

VCC1 2

VCC2 3

GND 4

GND 5

GND1 6

RF IN 7

PD 8

16 G16

15 G8

14 RF OUT

13 GND

12 GND

11 RF OUT

10 NC

9 NC

Package Style: Standard Batwing

Features

• Single 3V Supply

• 500mW CW Output Power

• 31dB Small Signal Gain

• Up to 60% Efficiency

• Digitally Controlled Output Power

• 430MHz to 930MHz Frequency Range

Ordering Information

RF2155

3V Programmable Gain Power Amplifier

RF2155 PCBA Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev B3 010417

2-179

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