RF2001T4S 데이터 시트보기 (PDF) - ROHM Semiconductor
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RF2001T4S Datasheet PDF : 4 Pages
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Data Sheet
Fast recovery diode
RF2001T4S
Applications
General rectification
Dimensions (Unit : mm)
Features
1) High reliability. (TO-220)
2) Low noise.
3) Very fast switching .
10.0±0.3
0.1
Structure
4.5±0.3
0.1
2.8±0.2
0.1
(1) (2) (3)
Construction
Silicon epitaxial planar
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
430
V
VR
400
V
Io
20
A
Forward current surge peak (60Hz/1cyc)(*1)
IFSM
100
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150
C
(*1)Business frequency, Rating of R-load, Tc=94CMAX.
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min. Typ. Max.
-
- 1.6
-
-
10
-
-
30
Unit
Conditions
V
IF=20A
μA
VR=400V
ns
IF=0.5A,IR=1A Irr=0.25*IR
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2011.05 - Rev.B
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