RF2001T4S 데이터 시트보기 (PDF) - ROHM Semiconductor

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RF2001T4S

Fast recovery diode

ROHM Semiconductor 

RF2001T4S

　

Electrical characteristics curves

Data Sheet

100

Ta=75C

Ta=125C

10

Ta=150C

1

Ta=25C

Ta=-25C

0.1

1000000

100000

10000

1000

100

10

Ta=150C

Ta=125C

Ta=75C

Ta=25C

Ta=-25C

0.01

0

200 400 600 800 1000 1200 1400 1600 1800

FORWARD VOLTAGE:VF(mV)

VF-IF CHARACTERISTICS

1

0 50 100 150 200 250 300 350 400 450

REVERSE VOLTAGE:VR(V)

VR-IR CHARACTERISTICS

1600

1500

1400

1300

500

Ta=25C

450

IF=20A

n=20pcs

400

350

300

250

200

150

100

AVE:1399mV

50

0

VF DISPERSION MAP

Ta=25C

VR=400V

n=20pcs

AVE:55.8nA

IR DISPERSION MAP

1000

100

10

0

500

480

460

440

420

400

f=1MHz

5

10

15

20

25

30

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

Ta=25C

f=1MHz

VR=0V

n=10pcs

AVE:442.1pF

Ct DISPERSION MAP

300

250

200

150

100

50

0

1000

100

10

0.1

30

Ifsm

1cyc

25

8.3ms

20

AVE:236.0A

15

10

5

0

IFSM DISPERSION MAP

AVE:22.6ns

Ta=25C

IF=0.5A

IR=1A

Irr=0.25*IR

n=10pcs

1000

100

10

Ifsm

8.3ms 8.3ms

1cyc

trr DISPERSION MAP

1

1

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

Ifsm

t

100

IM=100mA

IF=1A

1ms time

10

300us

1

Rth(j-a)

Rth(j-c)

1

10

TIME:t(ms)

IFSM-t CHARACTERISTICS

0.1

100

0.001 0.01 0.1

1

10

100 1000

TIME:t(s)

Rth-t CHARACTERISTICS

50

45

40

35

30

25

20

15

10

5

0

0

Sin(=180)

D=1/2

DC

10

20

30

40

AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)

Io-Pf CHARACTERISTICS

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2/3

2011.05 - Rev.B

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