RF2333 데이터 시트보기 (PDF) - RF Micro Devices

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RF2333

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2333

Absolute Maximum Ratings

Parameter

Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature

Rating

120

+20

-40 to +65

-60 to +150

Unit

mA

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Overall

4

Frequency Range

3dB Bandwidth

Gain

Gain Flatness

Noise Figure

Input VSWR

Output VSWR

Output IP3

Output P1dB

Reverse Isolation

Power Supply

Device Operating Voltage

Operating Current

Specification

Min.

Typ.

Max.

DC to 6000

6

11.2

11

10.4

10.2

10

9.2

8.3

±0.4

8.2

1.7:1

1.7:1

+34.5

+18.5

17

5.0

5.5

6.0

70

Unit

MHz

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

dB

V

mA

Condition

T=25°C, VD=5.5V, ICC=70mA

Freq = 100 MHz

Freq = 1000 MHz

Freq =2000 MHz

Freq = 3000 MHz

Freq = 4000 MHz

Freq = 5000 MHz

Freq = 6000 MHz

100MHz to 2000MHz

Freq = 2000 MHz

In a 50Ω system, DC to 4000MHz

In a 50Ω system, DC to 4000MHz

Freq=1000MHz±50kHz, PTONE=-10dBm

Freq =1000 MHz

Freq =2000 MHz

With 22Ω bias resistor

At pin 5 with ICC=70mA

4-138

Rev A5 010228

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