DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RF2422 데이터 시트보기 (PDF) - RF Micro Devices

부품명
상세내역
제조사
RF2422
RFMD
RF Micro Devices RFMD
RF2422 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RF2422
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +7.5
+10
-40 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Carrier Input
Frequency Range
Power Level
Input VSWR
5
Modulation Input
Frequency Range
Reference Voltage (VREF)
Maximum Modulation (I&Q)
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
RF Output
Output Power
Output Impedance
Output VSWR
Harmonic Output
Sideband Suppression
Carrier Suppression
IM3 Suppression
Broadband Noise Floor
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
Power Supply
Voltage
Current
Specification
Min.
Typ.
Max.
800
2500
-6
+6
5:1
1.8:1
1.2:1
Unit
MHz
dBm
Condition
T=25°C, VCC=5V
At 900MHz
At 1800MHz
At 2500MHz
DC
250
MHz
2.0
3.0
V
VREF ± 1.0
V
0.2
dB
3
°
30
k
40
µA
LO=2GHz and -5dBm, I&Q=2.0VPP, SSB
-3
+3
dBm
50
3.5:1
At 900MHz
1.3:1
At 2000MHz
1.15:1
-30
-35
25
35
30
35
30
35
25
30
-145
dBc
dB
dB
dB
dB
dBm/Hz
At 2500MHz
Intermodulation of the carrier and the
desired RF signal
Intermodulation of baseband signals
At 20MHz offset, VCC=5V.
Tied to VREF: ISIG, QSIG, IREF, and Q REF.
At 850MHz
-152
dBm/Hz At 1900MHz
100
ns
50
k
2.8
V
Threshold voltage
1.0
1.2
V
Threshold voltage
5
V
Specifications
4.5
6.0
V
Operating Limits
45
50
mA
Operating
25
µA
Power Down
5-30
Rev A5 010817

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]