RFG60P05E 데이터 시트보기 (PDF) - Intersil

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RFG60P05E

60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

Intersil 

RFG60P05E

Typical Performance Curves Unless Otherwise Specified (Continued)

-200

-100

STARTING TJ = 25oC

STARTING TJ = 150oC

If R = 0

tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)

If R ≠ 0

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

-10

0.01

0.1

1

10

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-160

VGS = -20V

-120

VGS = -10V

-80

-40

VGS = -8V

VGS = -7V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = -4.5V

VGS = -6V

VGS = -5V

0

0

-2

-4

-6

-8

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

-160

-120

VDD = -15V

PULSE DURATIONM = 80µs

DUTY CYCLE = 0.5% MAX

-55oC

25oC

-80

175oC

2

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = -10V, ID = 60A

1.5

1

-40

0.5

0

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. TRANSFER CHARACTERISTICS

0

-80 -40

0

40

80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2

VGS = VDS, ID = 250µA

1.5

1

0.5

0

-80 -40

0

40

80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

2

ID = 250µA

1.5

1

0.5

0

-80 -40

0

40

80

120 160 200

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

4-150

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