MJ3000(2012) 데이터 시트보기 (PDF) - Comset Semiconductors
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MJ3000 Datasheet PDF : 3 Pages
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PNP MJ3000 – MJ3001
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
BVCEO
ICEO
IEBO
ICER
VCE(SAT)
VBE
hFE
Collector-Emitter Breakdown
Voltage (*)
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter
Leakage Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
DC Current Gain (*)
IC=100mA
IB=0
VCE=30 V
IB=0
VCE=40 V
IB=0
VBE=5.0 V
IC=0
VCB=60 V
RBE=1.0 kΩ
VCB=80 V
RBE=1.0 kΩ
VCB=60 V
RBE=1.0 kΩ
TC=150°C
VCB=80 V
RBE=1.0 kΩ
TC=150°C
IC=5.0 A
IB=20 mA
IC=10 A
IB=50 mA
IC=5.0 A
VCE=3.0V
VCE=3.0 V
IC=5.0 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MJ3000 60 -
MJ3001 80 -
MJ3000 -
-
MJ3001 -
-
MJ3000
MJ3001
-
-
MJ3000 -
-
MJ3001 -
-
MJ3000 -
-
MJ3001 -
-
MJ3000
MJ3001
-
-
MJ3000
MJ3001
-
-
MJ3000
MJ3001
-
-
MJ3000
MJ3001
1000
-
-
-
V
1.0 mA
2.0 mA
1.0
mA
5.0
2.0
V
4.0
3
V
-
-
29/10/2012
COMSET SEMICONDUCTORS
2|3
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