RJH60F4DPK 데이터 시트보기 (PDF) - Renesas Electronics
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RJH60F4DPK Datasheet PDF : 8 Pages
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RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
VGE = 0 V
Pulse Test
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage VECF (V)
Dynamic Input Characteristics (Typical)
800
16
VGE
VCE
600
VCE = 600 V
12
300 V
400
8
200
0
0
4
VCE = 600 V
300 V
IC = 30 A 0
20 40 60 80 100
Gate Charge Qg (nC)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage VCE (V)
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 4 of 7
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