RJH60F4DPK 데이터 시트보기 (PDF) - Renesas Electronics
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RJH60F4DPK Datasheet PDF : 8 Pages
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RJH60F4DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 D=1
0.5
0.2
0.1
0.05
0.1
0.02 1 shot pulse
0.01
0.01
10 μ
100 μ
θj − c(t) = γs (t) • θj − c
θj − c = 0.53 °C/W, Tc = 25 °C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
Rg
L
D.U.T
VCC
VGE
10%
90%
IC
VCE
10%
td(on) tr
ton
90%
10%
1%
td(off) tf ttail
toff
10%
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 6 of 7
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