RJP60F5DPM 데이터 시트보기 (PDF) - Renesas Electronics
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RJP60F5DPM Datasheet PDF : 7 Pages
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RJP60F5DPM
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
Gate to emitter leak current
ICES
IGES
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
tr
td(off)
tf
Notes: 2. Pulse test
Typ
1.37
1.7
2780
100
43
74
24
26
53
77
90
85
Max
100
±1
8
1.8
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 40 A, VGE = 15 V Note2
IC = 80 A, VGE = 15 V Note2
VCE = 25 V
VGE = 0 V
f = 1 MHz
VGE = 15 V
VCC = 300 V
IC = 40 A
IC = 30 A
VCE = 400 V, VGE = 15 V
Rg = 5 Note2
Inductive load
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Page 2 of 6
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