RJP60F5DPM 데이터 시트보기 (PDF) - Renesas Electronics
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RJP60F5DPM Datasheet PDF : 7 Pages
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RJP60F5DPM
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
160
PVuClEse=T1e0stV
TPau=lse25T°eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
2
4
6
8
10
12
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
VGE = 15 V
2.0 Pulse Test
IC = 80 A
1.8
1.6
40 A
1.4
20 A
1.2
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0587EJ0200 Rev.2.00
May 31, 2012
Preliminary
Typical Output Characteristics
160
Pulse Test
Ta = 25°C
120
11 V
13 V
15 V
80
10.5 V
10 V
9.5 V
9V
40
8.5 V
VGE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.6
IC = 20 A
40 A
2.2
80 A
1.8
1.4
1.0
6 8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
VCE = 10 V
Pulse Test
8
IC = 10 mA
6
4
1 mA
2
0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
Page 3 of 6
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