VTT1223W 데이터 시트보기 (PDF) - PerkinElmer Inc
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VTT1223W Datasheet PDF : 1 Pages
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.025" NPN Phototransistors
Clear T-1¾ (5 mm) Plastic Package
VTT1222W, 23W
PACKAGE DIMENSIONS inch (mm)
CASE 26W T-1¾ (5 mm) WIDE ANGLE
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
a half power acceptance angle (θ1/2) of 40°. These
devices are spectrally and mechanically matched to the
VTE12xxW series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT1222W
VTT1223W
Light Current
lC
mA
Min. Max.
H
fc (mW/cm2)
VCE = 5.0 V
0.9 —
1.5 —
100 (5)
100 (5)
Dark Current
lCEO
H=0
(nA) VCE
Max. (Volts)
10 20
10 20
Collector
Breakdown
VBR(CEO)
lC = 100 µA
H= 0
Volts, Min.
50
40
Emitter
Breakdown
VBR(ECO)
lE = 100 µA
H=0
Volts, Min.
6.0
6.0
Saturation
Voltage
VCE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/tF
lC = 1.0 mA
RL = 100 Ω
Volts, Max.
µsec, Typ.
0.25
2.0
0.25
3.0
Angular
Response
θ1/2
Typ.
±40°
±40°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
93
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