RMPA1965 데이터 시트보기 (PDF) - Fairchild Semiconductor

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RMPA1965

US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module

Fairchild Semiconductor 

January 2006

RMPA1965

US-PCS CDMA, CDMA2000-1X and WCDMA

PowerEdge™ Power Amplifier Module

Features

■ Single positive-supply operation with low power and

shutdown modes

■ 40% CDMA/WCDMA efficiency at +28 dBm average

output power

■ Compact lead-free compliant low-profile package

(3.0 x 3.0 x 1.0 mm nominal)

■ Internally matched to 50Ω and DC blocked RF input/

output

■ Meets CDMA2000-1XRTT/WCDMA performance

requirements

■ Meets HSDPA performance requirement

General Description

The RMPA1965 power amplifier module (PAM) is

designed for CDMA, CDMA2000-1X, WCDMA and

HSDPA personal communications system (PCS) appli-

cations. The 2 stage PAM is internally matched to 50Ω to

minimize the use of external components and features a

low-power mode to reduce standby current and DC

power consumption during peak phone usage. High

power-added efficiency and excellent linearity are

achieved using our InGaP Heterojunction Bipolar Tran-

sistor (HBT) process.

Device

Functional Block Diagram

(Top View)

MMIC

Vcc1 1

RF IN 2

INPUT

MATCH

Vmode 3

DC BIAS CONTROL

Vref 4

8 Vcc2

OUTPUT

MATCH

7 RF OUT

6 GND

5 GND

(paddle ground on package bottom)

©2006 Fairchild Semiconductor Corporation

1

RMPA1965 Rev. J

www.fairchildsemi.com

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