RMPA1965 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RMPA1965 Datasheet PDF : 9 Pages
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Absolute Ratings1
Symbol
Parameter
Value
Units
Vcc1, Vcc2
Supply Voltages
5.0
V
Vref
Reference Voltage
2.6 to 3.5
V
Vmode
Power Control Voltage
3.5
V
Pin
RF Input Power
+10
dBm
TSTG
Storage Temperature
-55 to +150
°C
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
Parameter
f
Operating Frequency
CDMA Operation
SSg
Small-Signal Gain
Gp
Power Gain
Min
1850
Po
Linear Output Power
28
16
PAEd
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
Itot
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
ACPR1 ±1.25MHz Offset
ACPR2 ±2.25MHz Offset
General Characteristics
VSWR Input Impedance
NF
Noise Figure
Rx No Receive Band Noise Power
2fo-5fo
S
Harmonic Suppression3
Spurious Outputs2, 3
Ruggedness w/ Load
Mismatch3
Tc
Case Operating Temperature
-30
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off) Shutdown Leakage Current
Typ
26
27
24
40
10
25
460
120
-50
-52
-60
-68
2.0:1
4
-139
45
5
1
Max
1910
Units
MHz
Comments
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po = 0dBm
Po = +28 dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
IS-95
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode ≥ 2.0V
dB
dBm/Hz Po ≤ +28dBm; 1930 to
1990MHz
-50
dBc Po ≤ +28dBm
-60
dBc Load VSWR ≤ 5.0:1
10:1
No permanent damage.
85
°C
mA Vmode ≥ 2.0V
mA Po ≤ +28dBm
5
µA No applied RF signal.
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1880MHz and load VSWR ≤ 1.2:1, unless otherwise
noted.
2. All phase angles.
3. Guaranteed by design.
RMPA1965 Rev. J
2
www.fairchildsemi.com
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